EC8353 Electron Devices And Circuits previous year question paper
UNIT I PN JUNCTION DEVICES
PN junction diode –structure, operation and V-I characteristics, diffusion and transition capacitance – Rectifiers – Half Wave and Full Wave Rectifier,– Display devices- LED, Laser diodes, Zener diodecharacteristics- Zener Reverse characteristics – Zener as regulator
UNIT II TRANSISTORS AND THYRISTORS
BJT, JFET, MOSFET- structure, operation, characteristics and Biasing UJT, Thyristors and IGBT – Structure and characteristics.
UNIT III AMPLIFIERS
BJT small signal model – Analysis of CE, CB, CC amplifiers- Gain and frequency response –MOSFET small signal model– Analysis of CS and Source follower – Gain and frequency response- High frequency analysis.
UNIT IV MULTISTAGE AMPLIFIERS AND DIFFERENTIAL AMPLIFIER
BIMOS cascade amplifier, Differential amplifier – Common mode and Difference mode analysis – FET input stages – Single tuned amplifiers – Gain and frequency response – Neutralization methods, power amplifiers –Types (Qualitative analysis).
UNIT V FEEDBACK AMPLIFIERS AND OSCILLATORS
Advantages of negative feedback – voltage / current, series , Shunt feedback –positive feedback – Condition for oscillations, phase shift – Wien bridge, Hartley, Colpitts and Crystal oscillators.
EC8353 Electron Devices And Circuits previous year question paper for Regulation 2013