EC8353 Electron Devices And Circuits previous year question paper

EC8353 Electron Devices And Circuits previous year question paper


UNIT I PN JUNCTION DEVICES 

PN junction diode –structure, operation and V-I characteristics, diffusion and transition capacitance – Rectifiers – Half Wave and Full Wave Rectifier,– Display devices- LED, Laser diodes, Zener diodecharacteristics- Zener Reverse characteristics – Zener as regulator

UNIT II TRANSISTORS AND THYRISTORS 

BJT, JFET, MOSFET- structure, operation, characteristics and Biasing UJT, Thyristors and IGBT – Structure and characteristics.

UNIT III AMPLIFIERS 

BJT small signal model – Analysis of CE, CB, CC amplifiers- Gain and frequency response –MOSFET small signal model– Analysis of CS and Source follower – Gain and frequency response- High frequency analysis.

UNIT IV MULTISTAGE AMPLIFIERS AND DIFFERENTIAL AMPLIFIER 

BIMOS cascade amplifier, Differential amplifier – Common mode and Difference mode analysis – FET input stages – Single tuned amplifiers – Gain and frequency response – Neutralization methods, power amplifiers –Types (Qualitative analysis).

UNIT V FEEDBACK AMPLIFIERS AND OSCILLATORS

Advantages of negative feedback – voltage / current, series , Shunt feedback –positive feedback – Condition for oscillations, phase shift – Wien bridge, Hartley, Colpitts and Crystal oscillators.



EC8353 Electron Devices And Circuits previous year question paper for Regulation 2013 

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